to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors 2SC1923 transistor (npn) features z general purpose switching application maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 4 v collector cut-off current i cbo v cb =18v,i e =0 0.5 a emitter cut-off current i ebo v eb =4v,i c =0 0.5 a dc current gain h fe v ce =6v, i c =1ma 40 200 transition frequency f t v ce =6v,i c =1ma 550 mhz classification of h fe rank r o y range 40-80 70-140 100-200 symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 4 v i c collector current 0.02 a p c collector power dissipation 100 mw r ja thermal resistance from junction to ambient 1250 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
10 0.1 1 10 10 1000 0.01 0.1 1 10 10 100 1000 0 25 50 75 100 125 150 0.000 0.025 0.050 0.075 0.100 0.125 02468101214 0 1 2 3 4 f=1mhz i e =0 / i c =0 t a =25 2SC1923 reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob 1 transition frequency f t (mhz) collector current i c (ma) v ce =6v t a =25 i c f t ?? 3 3 300 100 1 common emitter v ce = 6v t a =100 t a =25 collector current i c (ma) dc current gain h fe i c h fe ?? 20 collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a common emitter t a =25 30ua 27ua 24ua 21ua 18ua 15ua 12ua 9ua 6ua i b =3ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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